Samsung presents the first computing in memory with MRAM technology

Madrid, Jan 18.(Portaltic/EP) -

Samsung has shown the first memory computing in the world made through MRAM technology, a new memory system that can be used for applications such as the development of low -consumption artificial intelligence chips (AI).

MRAM are the acronym for a magnetorresistive access, an alternative to the current non -volatile RAM systems, in which data storage and processing take place in the same unit, that is, with memory computing.

Although other systems of this type have already been tested such as the resistive memory of random access (RRAM) and the phase change random access memory (PRAM), MRAM was a technology that until now had not been tested due to its low resistance, as the company has reported in a statement.

The technology developed by Samsung, which has been published in Nature magazine, solves the problem of resistance through the development of a MRAM matrix chip that replaces the computer standard architecture, of 'Sum of Corrientes' by a new computer architectureIn memory of 'sum of resistances'.

Samsung presenta la primera computación en memoria con tecnología MRAM

The South Korean company has already demonstrated the operation of its new system for the AI calculations.The chip reached 98 percent accuracy in the classification of handwritten digits, and 93 percent in the detection of faces from scenes.

MRAM is already in commercial production in the semiconductor manufacturing system, and Samsung believes that this work "expands the border of low -consumption IA chip technologies of the next generation".

Researchers have also suggested that this new MRAM chip can not only be used for memory computing, but can also serve as a platform to download biological neural networks.